On the influence of interfaces and localised stress fields on irradiation-induced point-defect distributions in silicon-Reference-Cited by-同舟云学术

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On the influence of interfaces and localised stress fields on irradiation-induced point-defect distributions in silicon

Published:1993-12 Issue:6 Volume:57 Page:521-527
ISSN:0721-7250
Container-title:Applied Physics A Solids and Surfaces
language:en
Short-container-title:Appl. Phys. A

Author:

Vanhellemont J.,Romano-Rodr�guez A.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,Physics and Astronomy (miscellaneous),General Engineering,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF00331752.pdf

Reference19 articles.

1. A.L. Aseev, V.M. Astakhov: Sov. Phys. Solid State 24, 1163 (1982)

2. M. Hasebe, R. Oshima, F. Eiichi Fujita: Jpn. J. Appl. Phys. 25, 159 (1986)

3. A. Aseev, L. Fedina, D. Höhl, H. Bartsch: Solid State Phenomena 6&7, 235 (1989)

4. A.L. Aseev, S.G. Denisenko, L.I. Fedina: Sov. Phys. Semicond. 25, 352 (1991)

5. A. Romano-Rodríguez, J. Vanhellemont: Mater. Sci. Forum 83?87, 303 (1992)

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