Author:
Wu C.-H.,Stefanescu S.,Kuo H.-I.,Zorman C. A.,Mehregany M.
Publisher
Springer Berlin Heidelberg
Reference4 articles.
1. Mehregany, M.; Zorman, C.A.; Rajan, N.; Wu, C.H. “Silicon Carbide MEMS for Harsh Environments,” Proceeding of the IEEE, 86(1998) 1594-1610.
2. Zeirmann, R.; von Berg, J.; Reichert, W.; Obermeier, E.; Eickhoff, M.; Krotz, G. “A High Temperature Pressure Sensor with β-SiC Piezoresistors On SOI Substrates,” Tech. Dig. 1997 Int. Conf. Solid State Sensors and Actuators, ed., Wise, K.; Senturia, S., Chicago IL, June 16–19, (1997) 1411–1414.
3. Zorman, C.A.; Fleischmann, A.J.; Dewa, A.S.; Mehregany, M.; Jacob, C; Nishino, S.; Pirouz, P. “Epitaxial growth of 3C-SiC films on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition,” J. Appl. Phys., 78 (1995) 5136–5318.
4. Shor, J.S.; Goldstein, D.; Kurtz, A.D. “Characterization of n-Type β-SiC as a Piezoresistor,” IEEE Trans, on Electron Devices, 40(6) (1993) 1093–1099.
Cited by
14 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献