VPE Growth of SiC on Step-Controlled Substrates-Reference-Cited by-同舟云学术

VPE Growth of SiC on Step-Controlled Substrates

Published:1989 Issue: Volume: Page:34-39
ISSN:0930-8989
Container-title:Amorphous and Crystalline Silicon Carbide and Related Materials
language:
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Author:

Matsunami H.,Shibahara K.,Kuroda N.,Yoo W.,Nishino S.

Publisher

Springer Berlin Heidelberg

Link

http://link.springer.com/content/pdf/10.1007/978-3-642-93406-3_3.pdf

Reference17 articles.

1. W.v. Muench and I. Pfaffeneder: J. Appl. Phys., 48 (1977) 4833.

2. W.v. Muench and E. Pettenpaul: J. Appl. Phys., 48 (1977) 4823.

3. K. Koga, T. Tanaka and T. Tanaka Ext. Abstr. 17th Conf. Solid State Devices and Materials (Business Center for Academic Societies, Japan, Tokyo, 1985) p.249.

4. H. Matsunami, S. Nishino and H. Ono: IEEE Trans. Electron Devices, ED-28 (1981) 1235.

5. S. Nishino, H. Suhara and H. Matsunami: Ext. Abstr. 16th Conf. Solid State Devices and Materials (Business Center for Academic Societies, Japan, Tokyo, 1983) p.317.

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