Bipolar Resistive Switching Characteristics of Ta/TaxMnyOz/Pt Structure for ReRAM Application with Large Resistance Window
Author:
Funder
Samsung
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s13391-023-00440-5.pdf
Reference24 articles.
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2. Ielmini, D.: Resistive switching memories based on metal oxides: mechanisms, reliability and scaling. Semicond. Sci. Technol. 31, 063002 (2016). https://doi.org/10.1088/0268-1242/31/6/063002
3. Chen, Y.: ReRAM: history, status, and future. IEEE Trans. Electron. Devices. 67, 1420–1433 (2020). https://doi.org/10.1109/TED.2019.2961505
4. Zahoor, F., Azni Zulkifli, T.Z., Khanday, F.A.: Resistive random access memory (RRAM): an overview of materials, switching mechanism, performance, multilevel cell (mlc) storage, modeling, and applications. Nanoscale Res. Lett. 15, 90 (2020). https://doi.org/10.1186/s11671-020-03299-9
5. Prakash, R., Sharma, S., Kumar, A., Kaur, D.: Improved resistive switching performance in Cu-cation migrated MoS2 based ReRAM device incorporated with tungsten nitride bottom electrode. Curr. Appl. Phys. 19, 260–265 (2019). https://doi.org/10.1016/j.cap.2018.10.013
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