Author:
Mishra Umesh K.,Guidry Matthew
Publisher
Springer International Publishing
Reference119 articles.
1. Asif Khan M, Bhattarai A, Kuznia JN, Olson DT (1993) High electron mobility transistor based on a GaN AlxGa1−xN heterojunction. Appl Phys Lett 63(9):1214–1215
2. Asif Khan M, Kuznia JN, Olson DT, Schaff WJ, Burm JW, Shur MS (1994) Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor. Appl Phys Lett 65(9):1121–1123
3. Wu YF, Keller BP, Keller S, Kapolnek D, Denbaars SP, Mishra UK (1996) Measured microwave power performance of AlGaN/GaN MODFET. IEEE Electron Device Lett 17(9):455–457
4. Keller S, Wu YF, Parish G, Ziang N, Xu JJ, Keller BP, DenBaars SP, Mishra UK (2001) Gallium nitride based high power heterojunction field effect transistors: Process development and present status at UCSB. IEEE Trans Electron Devices 48(3):552–559
5. Wu YF, Keller BP, Keller S, Xu JJ, Thibeault BJ, Denbaars SP, Mishra UK (1999) GaN-based FETs for microwave power amplification. Ieice Trans Electron E82C(11):1895–1905
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Detrapping Kinetics in N-polar AlGaN/GaN MIS-HEMTs;2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA);2021-11-07
2. Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs;2021 IEEE International Reliability Physics Symposium (IRPS);2021-03
3. Virtual-Source Modeling of N-polar GaN MISHEMTS;2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS);2019-11
4. Modulation of Electrical Conductivity and Lattice Distortions in Bulk HVPE-Grown GaN;ECS Journal of Solid State Science and Technology;2019
5. Towards Uniform Electrochemical Porosification of Bulk HVPE-Grown GaN;Journal of The Electrochemical Society;2019