Author:
Agarwal Anuradha M.,Michel Jurgen
Publisher
Springer International Publishing
Reference43 articles.
1. J. Mort, J. Knights: Localization and electronic properties in amorphous semiconductors, Nature 290, 659–663 (1981)
2. F. Gaspari: Optoelectronic properties of amorphous silicon the role of hydrogen: From experiment to modeling. In: Optoelectronics – Materials and Techniques, ed. by P. Pradeep (InTech, London 2011)
3. M.H. Cohen, H. Fritzsche, S.R. Ovshinsky: Simple band model for amorphous semiconducting alloys, Phys. Rev. Lett. 22, 1065 (1969)
4. F. Orapunt, S.K. O'Leary: Optical transitions and the mobility edge in amorphous semiconductors: A joint density of states analysis, J. Appl. Phys. 104, 073513 (2008)
5. L. Banyai: On the theory of electric conduction in amorphous semiconductors. In: Proc. 7th Int. Conf. Phys. Semicond., Paris (1964) p. 417
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献