Etching Characteristics of Si{110} in NaOH Based Solution
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Publisher
Springer International Publishing
Link
https://link.springer.com/content/pdf/10.1007/978-3-031-20353-4_22
Reference31 articles.
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3. Swarnalatha, V., Narasimha Rao, A.V., Ashok, A., Singh, S.S., Pal, P.: Modified TMAH based etchant for improved etching characteristics on Si{100} wafer. J. Micromech. Microeng. 27(8), 085003 (2017)
4. Zubel, I.: Anisotropic etching of Si. J. Micromech. Microeng. 29(9), 093002 (2019)
5. Yang, C.R., Chen, P.Y., Chiou, Y.C., Lee, R.T.: Effects of mechanical agitation and surfactant additive on silicon anisotropic etching in alkaline KOH solution. Sens. Actuators A, Phys. 119(1), 263–270 (2005)
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1. Recent Frontiers in Anisotropic Wet Chemical Etching Techniques for Precision Surface Modification of Industrial-Grade Bulk Crystalline Silicon Wafers: Enhancing Performance in Photovoltaics and MEMS Devices;Silicon;2024-04-22
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