Enhanced coupling current in center MIS tunnel diode by effective control of the edge trapping in ring with Al2O3/SiO2 gate stack-Reference-Cited by-同舟云学术

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Enhanced coupling current in center MIS tunnel diode by effective control of the edge trapping in ring with Al2O3/SiO2 gate stack

Published:2023-12-26 Issue:1 Volume:130 Page:
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Kao Chi-Yi,Lin Jin-Cheng,Hwu Jenn-Gwo^ORCID

Funder

National Science and Technology Council

Ministry of Science and Technology, Taiwan

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

https://link.springer.com/content/pdf/10.1007/s00339-023-07192-x.pdf

Reference27 articles.

1. V. Mikhelashvili, S. Yofis, A. Shacham, I. Khanonkin, O. Eyal, G. Eisenstein, J. Appl. Phys. (2019). https://doi.org/10.1063/1.5111679

2. X. Song, B. Sun, J. Zhang, S. Zhao, Z. Bian, S. Liu, H. Zhou, Z. Liu, Y. Hao, J. Phys. D Appl. Phys. 55, 265103 (2022). https://doi.org/10.1088/1361-6463/ac5bca

3. T. Zhang, Y.N. Zhang, J.C. Zhang, X.D. Li, Y.G. Lv, Y. Hao, IEEE Electron Device Lett. 42, 304 (2021). https://doi.org/10.1109/led.2021.3051690

4. D.-H. Min, S.-E. Moon, S.-M. Yoon, J. Phys. D Appl. Phys. 53, 115109 (2020). https://doi.org/10.1088/1361-6463/ab622d

5. S.W. Huang, J.G. Hwu, IEEE Trans. Electron Devices 69, 7107 (2022). https://doi.org/10.1109/TED.2022.3215103

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